Gate quality Si3N4/Si/n‐In0.53Ga0.47As metal‐insulator‐semiconductor capacitors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108387
Reference8 articles.
1. Chemical composition and formation of thermal and anodic oxide/III–V compound semiconductor interfaces
2. Native grown plasma oxides and inversion layers on InGaAs
3. Characteristics of anodic native oxide MIS diodes of In0.53Ga0.47As
4. InGaAs enhancement-mode MISFETs using double-layer gate insulator
5. Characteristics of the low-temperature-deposited SiO2-Ga0.47In0.53As metal/insulator/semiconductor interface
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