Improvement of Atomic-Layer-Deposited Al 2 O 3 /GaAs Interface Property by Sulfuration and NH 3 Thermal Nitridation
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/25/11/032/pdf
Reference21 articles.
1. New anodic native oxide of GaAs with improved dielectric and interface properties
2. Low interface state density oxide-GaAs structures fabricated by in situ molecular beam epitaxy
3. Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films
4. Epitaxial Cubic Gadolinium Oxide as a Dielectric for Gallium Arsenide Passivation
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Oxide transformation and break-up of liquid metal in boiling solutions;Science China Technological Sciences;2019-03-14
2. Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric;IEEE Transactions on Electron Devices;2015-04
3. Nitrided HfTiON/Ga2O3(Gd2O3) as stacked gate dielectric for GaAs MOS applications;Applied Physics Express;2014-05-02
4. Improvement of Atomic-Layer-Deposited Al2O3/GaAs Interface Quality through a Novel Sulfuration Method;Advanced Materials Research;2011-07
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