Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates-Reference-Cited by-同舟云学术

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Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates

Published:2014-06-02 Issue:22 Volume:104 Page:223107
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Q.¹,Zhao S.¹,Connie A. T.¹,Shih I.¹,Mi Z.¹,Gonzalez T.²,Andrews M. P.²,Du X. Z.³,Lin J. Y.³,Jiang H. X.³

Affiliation:

1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada

2. Department of Chemistry, McGill University, 801 Sherbrooke St West, Montreal, Quebec H3A 0B8, Canada

3. Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, Texas 79409, USA

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4881558

Reference32 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

2. 200nm deep ultraviolet photodetectors based on AlN

3. Correlation between optoelectronic and structural properties and epilayer thickness of AlN

4. Unique optical properties of AlGaN alloys and related ultraviolet emitters

5. Enhanced light extraction in III-nitride ultraviolet photonic crystal light-emitting diodes

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4. Polarity Control of High Crystalline Quality Aln Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy;2024

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