A low-resistance, thermally stable Ohmic contact to n‐GaSb
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1989429
Reference31 articles.
1. The physics and technology of gallium antimonide: An emerging optoelectronic material
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3. Gallium antimonide device related properties
4. Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts
5. Ohmic Contacts of AuGeNi and Ag/AuGeNi to n-GaSb with Various Sintering Temperatures
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3. Electrical and microstructure analysis of nickel-based low-resistance ohmic contacts to n-GaSb;APL Materials;2013-12
4. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data;Journal of Applied Physics;2013-10-21
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