Influence of interface quality on structural and optical properties of GaxIn1−xAs/AlyIn1−yAs superlattices lattice matched to (001) InP
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344138
Reference10 articles.
1. Substrate rotation-induced compositional oscillation in molecular beam epitaxy (MBE)
2. Role of interface roughness and alloy disorder in photoluminescence in quantum‐well structures
3. Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells
4. Optical and structural properties of molecular-beam epitaxially grown Ga0.47In0.53As/Al0.48In0.52As superlattices, emitting at 1.55 ?m at room temperature
5. Improvements to and characterization of GaInAs/AlInAs heterointerfaces grown by molecular-beam epitaxy
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