Structural and optical properties of GaInAs∕GaAs and GaInNAs∕GaNAs multiple quantum wells upon postgrowth annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2201618
Reference15 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
3. Solubility of nitrogen in binary III–V systems
4. Role of N ions in the optical and morphological properties of InGaAsN quantum wells for 1.3–1.5μm applications
5. Spatial Correlations in GaInAsN Alloys and their Effects on Band-Gap Enhancement and Electron Localization
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Recent advances in the development of yellow-orange GaInNAs-based semiconductor disk lasers;SPIE Proceedings;2012-02-09
2. Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method;Journal of Crystal Growth;2009-03
3. On overannealing of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy;Journal of Applied Physics;2007-07
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