Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells-Reference-Cited by-同舟云学术

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Molecular beam epitaxial growth and optical properties of Ga0.47In0.53As/Al0.48In0.52As on InP and Ga1−xInxAs/GaAs on GaAs quantum wells

Published:1985-07 Issue:4 Volume:3 Page:947
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Goldstein L.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electron mobility characteristics of In x Ga 1 − x As/InAlAs/InP high electron mobility transistor (HEMT) structures grown by molecular beam epitaxy;Journal of Crystal Growth;1996-10

2. Influence of the desorption and growth temperatures on the crystalline quality of molecular-beam epitaxy InAlAs layers;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-09

3. Influence of interface quality on structural and optical properties of GaxIn1−xAs/AlyIn1−yAs superlattices lattice matched to (001) InP;Journal of Applied Physics;1989-10

4. Optical Properties and Band Alignments of III-V Heterostructures;NATO ASI Series;1989

5. Issues in molecular‐beam epitaxy kinetics of compound semiconductor based heterostructures;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1988-05

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