Surface strain and its impact on the electrical resistivity of GaN channel in AlGaN/GaN high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3040315
Reference17 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC
3. Electric breakdown in GaN p‐n junctions
4. Growth of GaN by ECR-assisted MBE
5. Electrical characteristics of InGaN∕GaN light-emitting diodes grown on GaN and sapphire substrates
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2. Thermal transport properties of GaN with biaxial strain and electron-phonon coupling;Journal of Applied Physics;2020-01-21
3. Strain-effect transistors: Theoretical study on the effects of external strain on III-nitride high-electron-mobility transistors on flexible substrates;Applied Physics Letters;2015-11-09
4. Structural and optical analyses of AlxGa1−xN thin films grown by metal organic chemical vapor deposition;Japanese Journal of Applied Physics;2015-01-22
5. A method to increase sheet electron density and mobility by vacuum annealing for Ti/Al deposited AlGaN/GaN heterostructures;Applied Physics Letters;2012-08-20
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