Direct observations of crystallization processes of amorphous GeSn during thermal annealing: A temperature window for suppressing Sn segregation
Author:
Affiliation:
1. Department of Materials Science and Engineering, Kyushu Institute of Technology, Kitakyushu, Fukuoka 804-8550, Japan
2. Department of Materials Science, Osaka Prefecture University, Sakai, Osaka 599-8531, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5086480
Reference41 articles.
1. Growth and applications of GeSn-related group-IV semiconductor materials
2. Carrier and heat transport properties of polycrystalline GeSn films on SiO2
3. Band anticrossing in highly mismatchedSnxGe1−xsemiconducting alloys
4. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy
5. Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx
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