Carbon doping of InSb using CBr4 during growth by gas-source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121024
Reference19 articles.
1. The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVD
2. Doping andp-n junction formation in InAs1-xSbx/lnSb SLS’s by MOCVD
3. High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector
4. Improving the performance of InAs1−xSbx/InSb infrared detectors grown by metalorganic chemical vapor deposition
5. Reproducible growth of InAsxSb1−x/InSb strained-layer superlattice photodiodes by low pressure MOCVD
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors;Nanoscale;2013
2. Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors;Journal of Applied Physics;2011-10
3. Characterization of carbon-doped InSb diode grown by molecular beam epitaxy;Journal of Physics D: Applied Physics;2007-12-21
4. Density-functional calculations of carbon doping in III-V compound semiconductors;Physical Review B;2001-03-29
5. Far-infrared absorption and Raman scattering studies in MeV C+- and C2+-implanted InSb(111) crystals;Physica B: Condensed Matter;2000-09
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