Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors-Reference-Cited by-同舟云学术

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Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors

Published:2013 Issue:20 Volume:5 Page:9671
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Yang Zai-xing,Han Ning,Wang Fengyun,Cheung Ho-Yuen,Shi Xiaoling,Yip SenPo,Hung TakFu,Lee Min Hyung,Wong Chun-Yuen,Ho Johnny C.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2013/NR/C3NR03080F

Reference32 articles.

1. Growth of nanowire superlattice structures for nanoscale photonics and electronics

2. Nanometre-scale electronics with III–V compound semiconductors

3. Thermal contraction in silicon nanowires at low temperatures

4. Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices

5. Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

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2. Energy Levels of Nanodots Inside Semiconductor Nanowires;Brazilian Journal of Physics;2024-06-11

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4. Surface band bending caused by native oxides on solution-processed twinned InSb nanowires with p-type conductivity;Nanoscale;2023

5. Toward Unusual‐High Hole Mobility of p‐Channel Field‐Effect‐Transistors;Small;2021-07-19

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