Doping challenges and pathways to industrial scalability of III–V nanowire arrays-Reference-Cited by-同舟云学术

Doping challenges and pathways to industrial scalability of III–V nanowire arrays

Published:2021-03 Issue:1 Volume:8 Page:011304
ISSN:1931-9401
Container-title:Applied Physics Reviews
language:en
Short-container-title:Applied Physics Reviews

Author:

Kim Wonjong¹,Güniat Lucas¹,Fontcuberta i Morral Anna¹²^ORCID,Piazza Valerio¹^ORCID

Affiliation:

1. Laboratory of Semiconductor Materials, Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

2. Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

Funder

Piaget Scientific Award

H2020 Marie Skłodowska-Curie Actions

National Center of Competence in Research Quantum Science and Technology

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0031549

Reference263 articles.

1. Tabulated values of the Shockley–Queisser limit for single junction solar cells

2. InGaAs Gate-All-Around Nanowire Devices on 300mm Si Substrates

3. Uncooled Photodetector at Short-Wavelength Infrared Using InAs Nanowire Photoabsorbers on InP with p–n Heterojunctions

4. InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit

5. Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate

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