Thermal stability and breakdown strength of carbon-doped SiO2:F films prepared by plasma-enhanced chemical vapor deposition method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.372406
Reference25 articles.
1. Deposition of stable, low κ and high deposition rate SiF4-doped TEOS fluorinated silicon dioxide (SiOF) films
2. Stabilizing dielectric constant of fluorine-doped SiO2 film by N2O and NH3 plasma post-treatment
3. A Room Temperature Chemical Vapor Deposition SiOF Film Formation Technology for the Interlayer in Submicron Multilevel Interconnections
4. Low Dielectric Constant Interlayer Using Fluorine-Doped Silicon Oxide
5. Water Absorption Properties of Fluorine-DopedSiO2Films Using Plasma-Enhanced Chemical Vapor Deposition
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