Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4751859
Reference11 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
3. Influence of surface states on the two-dimensional electron gas in AlGaN/GaN heterojunction field-effect transistors
4. Distribution of donor states on etched surface of AlGaN/GaN heterostructures
5. Oxidation and the origin of the two-dimensional electron gas in AlGaN/GaN heterostructures
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