Atomic scale structure of microtwins in single crystal Si grown by lateral solid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347368
Reference10 articles.
1. Microstructural characterization of nitrogen‐implanted silicon‐on‐insulator
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3. Lateral solid phase epitaxy of amorphous Si films on Si substrates with SiO2patterns
4. Solid‐phase lateral epitaxy of chemical‐vapor‐deposited amorphous silicon by furnace annealing
5. Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary
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3. Isotropic/anisotropic growth behavior and faceting morphology of Si epitaxial layer selectively grown by cold wall ultrahigh vacuum chemical vapor deposition;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
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5. Epitaxial CeO2 Growth on Si (111) for SOI;MRS Proceedings;1994
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