SiSn diodes: Theoretical analysis and experimental verification-Reference-Cited by-同舟云学术

SiSn diodes: Theoretical analysis and experimental verification

Published:2015-08-24 Issue:8 Volume:107 Page:082111
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hussain Aftab M.¹,Wehbe Nimer²,Hussain Muhammad M.¹

Affiliation:

1. Integrated Nanotechnology Laboratory, Computer Electrical Mathematical Science and Engineering (CEMSE) Division, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

2. Imaging and Characterization Laboratory, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

Funder

KAUST OCRF

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4929801

Reference33 articles.

1. The end of CMOS scaling

2. Wavy channel transistor for area efficient high performance operation

3. Area and Energy Efficient High-Performance ZnO Wavy Channel Thin-Film Transistor

4. Wavy channel thin film transistor architecture for area efficient, high performance and low power displays

5. Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance assessment of a new optimized Junctionless SiSn MOSFET;2023 20th International Conference on Electrical Engineering, Computing Science and Automatic Control (CCE);2023-10-25

2. Diversity of Behavior after Collisions of Sn and Si Nanoparticles Found Using a New Density Functional Tight-Binding Method;The Journal of Physical Chemistry A;2023-10-13

3. Novel Group-IV Alloy-Based MOS Field-Effect Phototransistors for Near-Infrared Applications;IEEE Sensors Journal;2023-08-01

4. Optoelectronic artificial synapse based on Si1-xSnx alloyed film;Vacuum;2023-06

5. Amorphous SiSn Alloy: Another Candidate Material for Temperature Sensing Layers in Uncooled Microbolometers;physica status solidi (b);2021-09-08