Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits-Reference-Cited by-同舟云学术

Silicon Nanotube Field Effect Transistor with Core–Shell Gate Stacks for Enhanced High-Performance Operation and Area Scaling Benefits

Published:2011-09-26 Issue:10 Volume:11 Page:4393-4399
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Fahad Hossain M.¹,Smith Casey E.¹,Rojas Jhonathan P.¹,Hussain Muhammad M.¹

Affiliation:

1. Integrated Nanotechnology Lab, Electrical Engineering, Division of Physical Science and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl202563s

Reference15 articles.

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4. Nanoelectronics from the bottom up

5. Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

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