Integrated multijunction GaAs photodetector with high output voltage
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90443
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1. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
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3. GaAs planar technology by molecular beam epitaxy (MBE)
4. Concentration dependence of the absorption coefficient forn− andp−type GaAs between 1.3 and 1.6 eV
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