Structural characterization of Si0.7Ge0.3layers grown on Si(001) substrates by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363841
Reference20 articles.
1. High electron mobility in modulation‐doped Si/SiGe
2. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
3. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
4. Modulation doping in GexSi1−x/Si strained layer heterostructures
5. Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
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