High field electron dynamics in dilute nitride Ga(AsN)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2960547
Reference22 articles.
1. Band Anticrossing in GaInNAs Alloys
2. Theory of electronic structure evolution in GaAsN and GaPN alloys
3. Unification of the Band Anticrossing and Cluster-State Models of Dilute Nitride Semiconductor Alloys
4. Interaction between conduction band edge and nitrogen states probed by carrier effective-mass measurements inGaAs1−xNx
5. Magnetotunneling Spectroscopy of Dilute Ga(AsN) Quantum Wells
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1. Technological Applications of Hydrogenated Dilute Nitrides and Perspectives;Hydrogenated Dilute Nitride Semiconductors;2015-04-01
2. Theory of high-field electron transport in the heterostructures AlxGa1-xAs/GaAs/AlxGa1-x with delta-doped barriers. Effect of real-space transfer;Semiconductor Physics, Quantum Electronics & Optoelectronics;2015-03-25
3. Hydrogen Incorporation in III-N-V Semiconductors: From Macroscopic to Nanometer Control of the Materials’ Physical Properties;Advanced Functional Materials;2012-03-16
4. Monte Carlo Techniques for Carrier Transport in Semiconductor Materials;Semiconductor Modeling Techniques;2012
5. NEGATIVE DIFFERENTIAL VELOCITY IN ARTIFICIAL CRYSTALS PROBED BY HIGH MAGNETIC FIELDS;International Journal of Modern Physics B;2009-05-20
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