Defect luminescence in cw laser‐annealed silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325962
Reference13 articles.
1. Physical and electrical properties of laser‐annealed ion‐implanted silicon
2. Deep levels in ion-implanted, CW laser-annealed silicon
3. Electronic defect levels in self‐implanted cw laser‐annealed silicon
4. New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium
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2. INVESTIGATION OF NEAR-SURFACE DEFECTS INDUCED BY SPIKE RAPID THERMAL ANNEALING IN c-SILICON SOLAR CELLS;Surface Review and Letters;2016-02-29
3. Hydrogen-induced states near the GaAs band edges;Physical Review B;1999-02-15
4. Photoluminescence study of radiative channels in ion-implanted silicon;Physical Review B;1990-09-15
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