Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Impact of static and dynamic stress on threshold voltage instability in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Published:2011-02-28 Issue:9 Volume:98 Page:092112
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Dai Chih-Hao,Chang Ting-Chang,Chu Ann-Kuo,Kuo Yuan-Jui,Lo Wen-Hung,Ho Szu-Han,Chen Ching-En,Shih Jou-Miao,Chen Hua-Mao,Dai Bai-Shan,Xia Guangrui,Cheng Osbert,Huang Cheng Tung

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3560463

Reference11 articles.

1. Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters

2. Review on high-k dielectrics reliability issues

3. Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks

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