Dopant profiles determined from enhancement‐mode MOSFET dc measurements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89572
Reference9 articles.
1. Vereinfachte und erweiterte Theorie der Randschicht-gleichrichter
2. Silicon Impurity Distribution as Revealed by Pulsed MOS C-V Measurements
3. Doping Profiles by MOSFET Deep Depletion C(V)
4. Peripheral and diffused layer effects on doping profiles
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1. Determination of the p-spray profile for n+p silicon sensors using a MOSFET;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2017-09
2. $V_{T} - V_{\rm SUB}$ Characterization of AlGaN/GaN HFET With p-Type Body Layer;IEEE Transactions on Electron Devices;2011-12
3. Simple nondestructive extraction of the vertical channel-impurity profile of small-size metal–oxide–semiconductor field-effect transistors;Applied Physics Letters;2002-04-22
4. Data Acquisition and Model Parameter Measurements;Computational Microelectronics;1993
5. MOSFET doping profiling;IEEE Transactions on Electron Devices;1991
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