$V_{T} - V_{\rm SUB}$ Characterization of AlGaN/GaN HFET With p-Type Body Layer-Reference-Cited by-同舟云学术

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$V_{T} - V_{\rm SUB}$ Characterization of AlGaN/GaN HFET With p-Type Body Layer

Published:2011-12 Issue:12 Volume:58 Page:4265-4271
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hu Cheng-Yu,Kikuta Daigo,Sugimoto Masahiro,Ao Jin-Ping,Ohno Yasuo

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6074986/06069574.pdf?arnumber=6069574

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress;Journal of Applied Physics;2012-04-15

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