Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4704393
Reference59 articles.
1. Current/voltage characteristic collapse in AlGaN/GaN heterostructure insulated gate field effect transistors at high drain bias
2. Trapping effects in GaN and SiC microwave FETs
3. Trapping effects and microwave power performance in AlGaN/GaN HEMTs
4. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
5. Impact of Gate and Passivation Structures on Current Collapse of AlGaN/GaN High-Electron-Mobility Transistors under Off-State-Bias Stress
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1. Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs;Japanese Journal of Applied Physics;2023-11-01
2. Double Gaussian Distribution of Inhomogeneous Barrier Height in (Ni-Au)/Al0.25Ga0.75N/GaN;Brazilian Journal of Physics;2022-12-17
3. Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor;Journal of Applied Physics;2021-11-28
4. Effects of current transportation and deep traps on leakage current and capacitance hysteresis of AlGaN/GaN HEMT;Materials Science in Semiconductor Processing;2020-08
5. Characterization of Deep and Shallow Traps in GaN HEMT Using Multi-Frequency C-V Measurement and Pulse-Mode Voltage Stress;IEEE Transactions on Device and Materials Reliability;2019-06
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