Determination of the p-spray profile for n+p silicon sensors using a MOSFET

Author:

Fretwurst E.,Garutti E.,Klanner R.,Kopsalis I.,Schwandt J.,Weberpals M.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference24 articles.

1. Concepts of simplifaction of strip detector design and production;Kemmer;Nucl. Instrum. Methods Phys. Res. A,1993

2. Strip detector design for ATLAS and HERA-B using two-dimensional device simulation;Richter;Nucl. Instrum. Methods Phys. Res. A,1996

3. Single-sided p+n and double-sided silicon strip detectors exposed to fluences up to 2×1014cm−224GeV protons;Andricek;Nucl. Instrum. Methods Phys. Res. A,1998

4. Optimal p-stop pattern for the n-side strip isolation of silicon microstrip detectors;Iwata;IEEE Trans. Nucl. Sci.,1998

5. Semiconductor Material and Device Characterization;Schroder,2006

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1. The Boron–Oxygen (BᵢOᵢ) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes;IEEE Transactions on Nuclear Science;2022-03

2. Field effect transistor test structures for inter-strip isolation studies in silicon strip detectors;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2020-04

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