Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires-Reference-Cited by-同舟云学术

Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires

Published:2001-12 Issue:11 Volume:90 Page:5623-5626
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wohlert D. E.,Change K. L.,Pickrell G. W.,Hsieh K. C.,Cheng K. Y.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1415755

Reference15 articles.

1. AlGaInP multiple‐quantum‐wire lasers grown by gas source molecular beam epitaxy

2. Strain relaxation and ordering in SiGe layers grown on (100), (111), and (110) Si surfaces by molecular‐beam epitaxy

3. Vertically Self-Organized InAs Quantum Box Islands on GaAs(100)

4. Structural and photoluminescence properties of growth-induced InAs island columns in GaAs

5. Self-Organization in Growth of Quantum Dot Superlattices

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realization of temperature-insensitive energy band-gap based on nanowire-well quantum systems for thermally frequency-stable laser diodes;Journal of Materials Chemistry C;2024

2. Tailoring detection wavelength of InGaAs quantum wire infrared photodetector;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

3. Growth optimization of InGaAs quantum wires for infrared photodetector applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

4. Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy;Journal of Crystal Growth;2003-04