Improved uniformity of self-organized In0.53Ga0.47As/In0.52Al0.48As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Self-organization of wire-like InAs nanostructures on InP
2. Photoluminescence properties of dense InAs/AlInAs quantum wire arrays
3. Self-assembled InAs quantum wires on InP(001)
4. Self-assembled InAs quantum wires on InP(001)
5. Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial Semiconductor Quantum Wires;Journal of Nanoscience and Nanotechnology;2008-07-01
2. Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness;Journal of Crystal Growth;2005-10
3. Artificial nanograting woven by self-assembled nanowires;Nanotechnology;2005-08-09
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