Influence of rapid thermal annealing on InAs/InAlAs/InP quantum wires with different InAs deposited thickness
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Quantum Dot Heterostructures;Bimberg,1998
2. Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (001) InP substrate by MOCVD
3. Surface morphology control of InAs nanostructures grown on InGaAs/InP
4. Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)
5. Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates
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1. Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots;Journal of Semiconductors;2020-12-01
2. Preferential sites for InAsP/InP quantum wire nucleation using molecular dynamics;The European Physical Journal B;2014-11
3. Enhanced photoluminescence efficiency of mid-infrared InAsSb nanostructures using a carrier blocking layer;Applied Physics Letters;2010-05-24
4. Growth, Optical, and Transport Properties of Self-Assembled InAs/InP Nanostructures;Nanoscale Photonics and Optoelectronics;2010
5. Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites;Nanotechnology;2006-10-30
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