Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites-Reference-Cited by-同舟云学术

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Determination of the strain generated in InAs/InP quantum wires: prediction of nucleation sites

Published:2006-10-30 Issue:22 Volume:17 Page:5652-5658
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Molina S I,Ben T,Sales D L,Pizarro J,Galindo P L,Varela M,Pennycook S J,Fuster D,González Y,González L

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/17/i=22/a=020/pdf

Reference19 articles.

1. InAs/InP Self-Assembled Quantum Dots: Wavelength Tuning and Optical Nonlinearities

2. Nanoepitaxy of InAs∕InP quantum dots by metalorganic vapor phase epitaxy for 1.55μm emitters

3. InAs∕InP(001) quantum dots emitting at 1.55μm grown by low-pressure metalorganic vapor-phase epitaxy

4. Impact of the capping layers on lateral confinement in InAs∕InP quantum dots for 1.55μm laser applications studied by magnetophotoluminescence

5. SELF-ASSEMBLED SEMICONDUCTOR QUANTUM DOTS: Fundamental Physics and Device Applications

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1. Analytic solutions for displacements in quantum-wire structures;Journal of Applied Physics;2023-05-02

2. Effects of electron–phonon interaction and impurity on optical properties of hexagonal-shaped quantum wires;Pramana;2017-02-10

3. Atomic Resolution Characterization of Semiconductor Materials by Aberration-Corrected Transmission Electron Microscopy ☆;Reference Module in Materials Science and Materials Engineering;2017

4. Electrostatic Trapping of Double-Stranded DNA Based on Cd(OH)2 Three-Side Nanobelt Architectures;The Journal of Physical Chemistry C;2015-01-20

5. Preferential sites for InAsP/InP quantum wire nucleation using molecular dynamics;The European Physical Journal B;2014-11

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