Mobility evaluation in transistors with charge-trapping gate dielectrics-Reference-Cited by-同舟云学术

Mobility evaluation in transistors with charge-trapping gate dielectrics

Published:2005-07-25 Issue:4 Volume:87 Page:042905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bersuker G.,Zeitzoff P.,Sim J. H.,Lee B. H.,Choi R.,Brown G.,Young C. D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1995956

Reference9 articles.

1. Proceedings of MRS Spring Meeting;Bersuker G.,2004

2. Mobility Measurement and Degradation Mechanisms of MOSFETs Made With Ultrathin High-k Dielectrics

3. A. Kerber, E. Cartier, L. A. Ragnarsson, M. Rosmeulen, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, and G. Groeseneken, VLSI Technology Symposium Digest, Kyoto, 2003, p. 159.

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