Understanding the charge transport mechanisms through ultrathin SiOx layers in passivated contacts for high-efficiency silicon solar cells-Reference-Cited by-同舟云学术

Understanding the charge transport mechanisms through ultrathin SiOx layers in passivated contacts for high-efficiency silicon solar cells

Published:2019-02-25 Issue:8 Volume:114 Page:083902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kale Abhijit S.¹²^ORCID,Nemeth William²,Guthrey Harvey²^ORCID,Kennedy Ellis³^ORCID,Norman Andrew G.²^ORCID,Page Matthew²,Al-Jassim Mowafak²,Young David L.²^ORCID,Agarwal Sumit¹^ORCID,Stradins Paul²

Affiliation:

1. Chemical and Biological Engineering Department, Colorado School of Mines, 1613 Illinois Street, Golden, Colorado 80401, USA

2. National Renewable Energy Laboratory, 15013 Denver West Parkway, Golden, Colorado 80401, USA

3. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA

Funder

U.S. Department of Energy

Solar Energy Technologies Office

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5081832

Reference31 articles.

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3. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

4. A 720 mV open circuit voltage SiOx:c‐Si:SiOxdouble heterostructure solar cell

5. J. Gan , thesis, Stanford University, 1990.

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