Optimization of rear surface morphology for industrial tunnel oxide passivated contact solar cells
Author:
Affiliation:
1. Jiangsu College of Engineering and Technology, School of Aviation and Transportation, Nantong, China
2. Soochow University, School of Physical Science and Technology, Suzhou, China
Publisher
SPIE-Intl Soc Optical Eng
Reference22 articles.
1. n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
2. Laser contact openings for local poly-Si-metal contacts enabling 26.1%-efficient POLO-IBC solar cells
3. Explorative studies of novel silicon surface passivation materials: Considerations and lessons learned
4. 24.58% total area efficiency of screen-printed, large area industrial silicon solar cells with the tunnel oxide passivated contacts (i-TOPCon) design
5. Detailed loss analysis of 24.8% large-area screen-printed n-type solar cell with polysilicon passivating contact
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