Height control of self-assembled quantum dots by strain engineering during capping-Reference-Cited by-同舟云学术

Height control of self-assembled quantum dots by strain engineering during capping

Published:2014-10-06 Issue:14 Volume:105 Page:143104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Grossi D. F.¹,Smereka P.²,Keizer J. G.¹³,Ulloa J. M.⁴,Koenraad P. M.¹

Affiliation:

1. Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB, Eindhoven, The Netherlands

2. Department of Mathematics, University of Michigan, Ann Arbor, Michigan 48109, USA

3. Australian Research Council Centre of Excellence for Quantum Computation and Communications, School of Physics, University of New South Wales, Sydney 2052, Australia

4. Institute for Systems based on Optoelectronics and Microtechnology (ISOM), Universidad Politecnica de Madrid, Avenida Complutense 30, 28040 Madrid, Spain

Funder

Division of Mathematical Sciences (DMS)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4897345

Reference19 articles.

1. Atomic structure of InAs quantum dots on GaAs

2. Nature of the Stranski-Krastanow Transition during Epitaxy of InGaAs on GaAs

3. InGaAs-GaAs quantum-dot lasers

4. Electrically Driven Single-Photon Source

5. Silicon single-electron quantum-dot transistor switch operating at room temperature

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1. Exploring the Implementation of GaAsBi Alloys as Strain-Reducing Layers in InAs/GaAs Quantum Dots;Nanomaterials;2024-02-17

2. Quaternary – alloyed capping for strain and band engineering in InAs sub – monolayer quantum dots;Micro and Nanostructures;2022-05

3. Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position;Materials;2015-07-24

4. Erratum: “Height control of self-assembled quantum dots by strain engineering during capping” [Appl. Phys. Lett. 105, 143104 (2014)];Applied Physics Letters;2014-11-10