High-field quasi-ballistic transport in AlGaN/GaN heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4866281
Reference25 articles.
1. Materials theory based modeling of wide band gap semiconductors: from basic properties to devices
2. Rigid ion model of high field transport in GaN
3. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure
4. Bulk GaN and AlGaN∕GaN heterostructure drift velocity measurements and comparison to theoretical models
5. High Field Transport Studies of GaN
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