Materials theory based modeling of wide band gap semiconductors: from basic properties to devices-Reference-Cited by-同舟云学术

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Materials theory based modeling of wide band gap semiconductors: from basic properties to devices

Published:2000-02 Issue:2 Volume:44 Page:195-204
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Brennan Kevin F,Bellotti Enrico,Farahmand Maziar,Haralson Joe,Ruden P.Paul,Albrecht John D,Sutandi Agust

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. GaN based transistors for high power applications

2. Megawatt solid-state electronics

3. IEEE Electron Dev;Weitzel;Lett.,1995

4. Experimental and Simulated Results of SiC Microwave Power MESFETs

5. Kiyoku H;Nakamura;Appl Phys Lett,1997

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