Multi-level resistive switching observations in asymmetric Pt/Ta2O5−x/TiOxNy/TiN/Ta2O5−x/Pt multilayer configurations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4818129
Reference19 articles.
1. Nanoionics-based resistive switching memories
2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
3. Memristive switching mechanism for metal/oxide/metal nanodevices
4. Self-Aligned Memristor Cross-Point Arrays Fabricated with One Nanoimprint Lithography Step
5. A hybrid nanomemristor/transistor logic circuit capable of self-programming
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