GaN epitaxy on thermally treated c-plane bulk ZnO substrates with O and Zn faces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1690469
Reference14 articles.
1. Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates
2. Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy
3. Optical properties of GaN grown on ZnO by reactive molecular beam epitaxy
4. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
5. Growth of Ga-face and N-face GaN films using ZnO Substrates
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