Inverted surface effect ofp‐type HgCdTe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98486
Reference12 articles.
1. Electrical transport properties of semiconducting CdxHg1-xTe alloys
2. Anomalous Electrical Properties ofp‐Type Hg1−xCdxTe
3. Carrier freeze-out and acceptor energies in p-type Hg1−xCdxTe
4. Hall effect and resistivity in liquid‐phase‐epitaxial layers of HgCdTe
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1. Above-Hg1−x Cd x Te-bandgap photoluminescence and interfacial channels in Hg1−x Cd x Te-CdTe heterostructure;physica status solidi (b);2015-10-19
2. Competing conduction mechanisms of two-dimensional electrons and bulk-like electrons in the n-type surface of the naturally oxidized p-type HgCdTe thin film;Applied Physics A;2011-11-24
3. Spin-related magnetoresistance oscillations in the inversion layer on bulk p-Hg1−xCdxTe;Journal of Applied Physics;2011-06
4. Leakage currents over the Surface of CdHgTe-based photodiodes;Semiconductors;2004-07
5. Doping control in HgCdTe epitaxial layers;SPIE Proceedings;2003-10-21
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