Leakage currents over the Surface of CdHgTe-based photodiodes-Reference-Cited by-同舟云学术

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Leakage currents over the Surface of CdHgTe-based photodiodes

Published:2004-07 Issue:7 Volume:38 Page:855-860
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Biryulin P. V.,Turinov V. I.,Yakimov E. B.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1777614.pdf

Reference15 articles.

1. R. E. DeWames, G. M. Williams, J. G. Pasko, and A. H. B. Vanderwyck, J. Cryst. Growth 86, 849 (1988).

2. A. I. Elizarov, V. I. Ivanov-Omskii, A. A. Korniyash, and V. A. Petryakov, Fiz. Tekh. Poluprovodn. (Leningrad) 18, 201 (1984) [Sov. Phys. Semicond. 18, 125 (1984)].

3. M. C. Chen, Appl. Phys. Lett. 51, 1836 (1987).

4. S. E. Schachm and E. Finkman, Opt. Eng. 29, 795 (1990).

5. M. G. Andrukhiv, S. V. Belotelov, and I. S. Virt, Fiz. Tekh. Poluprovodn. (St. Petersburg) 27, 1863 (1993) [Semiconductors 27, 1026 (1993)].

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