Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation-Reference-Cited by-同舟云学术

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Current generation mechanisms in small band gap HgCdTe p-n junctions fabricated by ion implantation

Published:1988-01 Issue:1-4 Volume:86 Page:849-858
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

DeWames R.E.,Williams G.M.,Pasko J.G.,Vanderwyck A.H.B.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. IEOM Digest Tech. Papers;Lanir,1979

2. LPE growth of Hg0.60Cd0.40Te from Te‐rich solution

3. Liquid phase epitaxial growth of CdTe/Hg1−xCdxTe multilayers (0.3

4. Performance of PV HgCdTe arrays for 1-14-µm applications

5. Infrared Detectors, Sensors and Focal Plane Arrays;Vydyanath;SPIE,1986

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