Above-Hg1−x Cd x Te-bandgap photoluminescence and interfacial channels in Hg1−x Cd x Te-CdTe heterostructure-Reference-Cited by-同舟云学术

Above-Hg1−x Cd x Te-bandgap photoluminescence and interfacial channels in Hg1−x Cd x Te-CdTe heterostructure

Published:2015-10-19 Issue:2 Volume:253 Page:377-383
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Zhu Liang¹,Chen Lu²,Zhu Liangqing¹³,Qi Zhen¹,Chen Xiren¹,Guo Shaoling¹,He Li²,Shao Jun¹

Affiliation:

1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences; 200083 Shanghai P.R. China

2. Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences; 200083 Shanghai P.R. China

3. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University; 200062 Shanghai P.R. China

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference35 articles.

1. Characterization of molecular beam epitaxially grown HgCdTe on CdTe and InSb buffer layers

2. A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density hydrogen plasma modification

3. Intrinsic Spin Hall Effect Induced by Quantum Phase Transition in HgCdTe Quantum Wells

4. Screening properties and plasmons of Hg(Cd)Te quantum wells

5. Electric field driven quantum phase transition between band insulator and topological insulator

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