Field drift and hydrogenation of deep level defects associated with 1‐MeV ion‐implanted oxygen in germanium diodes
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332482
Reference34 articles.
1. Oxygen as a Donor Element in Germanium
2. Properties of oxygen in germanium
3. Donor equilibria in the Germanium-oxygen system
4. Kinetics of donor reactions in oxygen-doped germanium
5. The ionization behavior of donors formed from oxygen in germanium
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2. Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium $\hbox{n}^{+}/\hbox{p}$ Junction;IEEE Electron Device Letters;2013-01
3. Ab-Initio Modeling of Defects in Germanium;Germanium-Based Technologies;2007
4. OBSERVATION OF A LONG-RANGE ELECTRIC DRIFT OF NEGATIVELY CHARGED VACANCIES IN THE SPACE-CHARGE REGIONS OF AU/N-SI SCHOTTKY DIODES;Journal of Physics: Condensed Matter;1995-09-25
5. Electronic effects of ion mobility in semiconductors: Semionic behaviour of CuInSe2;Journal of Physics and Chemistry of Solids;1995-09
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