First principles study of the oxygen vacancy formation and the induced defect states in hafnium silicates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3702578
Reference42 articles.
1. High dielectric constant gate oxides for metal oxide Si transistors
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4. Dielectric constant enhancement due to Si incorporation into HfO2
5. Formation of dual-phase HfO2–HfxSi1−xO2 dielectric and its application in memory devices
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