Formation of dual-phase HfO2–HfxSi1−xO2 dielectric and its application in memory devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1954870
Reference16 articles.
1. A Novel MONOS-Type Nonvolatile Memory Using High-<tex>$kappa$</tex>Dielectrics for Improved Data Retention and Programming Speed
2. 2003 Symposis on VLSI Technology and Circuits;Sugizaki T.,2003
3. Over-Erase Phenomenon in SONOS-Type Flash Memory and its Minimization Using a Hafnium Oxide Charge Storage Layer
4. High performance SONOS memory cells free of drain turn-on and over-erase: compatibility issue with current flash technology
5. Materials characterization of ZrO2–SiO2 and HfO2–SiO2 binary oxides deposited by chemical solution deposition
Cited by 15 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comprehensive study on charge trapping property of Si-containing hafnium-oxide polymorph;Japanese Journal of Applied Physics;2016-06-10
2. A hybrid ferroelectric-flash memory cells;Journal of Applied Physics;2014-09-28
3. Oxygen vacancy formation and the induced defect states in HfO2 and Hf-silicates – A first principles hybrid functional study;Microelectronics Reliability;2014-06
4. Atomic scale microstructures of high-k HfSiO thin films fabricated by magnetron sputtering;Materials Science and Engineering: B;2012-06
5. Nonvolatile floating gate memory containing AgInSbTe–SiO2nanocomposite layer and capping the HfO2/SiO2composite blocking oxide layer;Nanotechnology;2012-05-10
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3