High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2267663
Reference13 articles.
1. High-performance strained-SOI CMOS devices using thin film SiGe-on-insulator technology
2. Performance assessment of scaled strained-Si channel-on-insulator (SSOI) CMOS
3. Fully Depleted n-MOSFETs on Supercritical Thickness Strained SOI
4. Dislocation-free formation of relaxed SiGe-on-insulator layers
5. Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique
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1. Formation, evolution, and prevention of thermally induced defects on germanium and silicon upon high-temperature vacuum annealing;Journal of Vacuum Science & Technology A;2021-12
2. Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method;Applied Physics Letters;2019-02-11
3. Ge-on-insulator wafer with ultralow defect density fabricated by direct condensation of SiGe-on-insulator structure;Applied Surface Science;2015-11
4. Kinetics and Energetics of Ge Condensation in SiGe Oxidation;The Journal of Physical Chemistry C;2015-10-19
5. Ge Condensation and Its Device Application;Photonics and Electronics with Germanium;2015-05-08
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