Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method
Author:
Affiliation:
1. Department of Electrical Engineering and Information Systems, University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5068713
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3. Strain and optical characteristics analyses of three-dimentional self-ordered multilayered SiGe nanodots by photoluminescence and Raman spectroscopy;Japanese Journal of Applied Physics;2024-02-16
4. Engineering epitaxy and condensation: Fabrication of Ge nanolayers, mechanism and applications;Applied Surface Science;2023-09
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