Reflection high energy electron diffraction observation of anion exchange reactions on InAs surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.355893
Reference14 articles.
1. Oscillations up to 712 GHz in InAs/AlSb resonant‐tunneling diodes
2. Resonant interband tunnel diodes
3. New negative differential resistance device based on resonant interband tunneling
4. Interband tunneling in polytype GaSb/AlSb/InAs heterostructures
5. Experimental observation of negative differential resistance from an InAs/GaSb interface
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1. Interactions between Sb and As on InAs(0 0 1) surfaces;Journal of Crystal Growth;2018-10
2. The atomistic mechanism for Sb segregation and As displacement of Sb in InSb(001) surfaces;Surface Science;2018-01
3. Surface intermixing by atomic scale roughening in Sb-terminated InAs;Journal of Applied Physics;2017-03-07
4. Effect of antimony coverage on InAs/GaAs (001) heteroepitaxy;Molecular Beam Epitaxy;2013
5. Interrelationships in the electronic and structural characteristics of strained InAs quantum well structures;Journal of Crystal Growth;2006-01
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