Surface intermixing by atomic scale roughening in Sb-terminated InAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4976682
Reference36 articles.
1. Band gap of InAs1−xSbxwith native lattice constant
2. Miscibility gaps in the GaPInP, GaPGaSb, InPInSn and InAsInSb systems
3. Substrate lattice constant effect on the miscibility gap of MBE grown InAsSb
4. Ordering-induced band-gap reduction inInAs1−xSbx(x≊0.4) alloys and superlattices
5. Atomic ordering in molecular beam epitaxial InAsySb1−ynatural strained layer superlattices and homogeneous layers
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. InAsSb-based photodetectors;Mid-infrared Optoelectronics;2020
2. Interactions between Sb and As on InAs(0 0 1) surfaces;Journal of Crystal Growth;2018-10
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