Ordering-induced band-gap reduction inInAs1−xSbx(x≊0.4) alloys and superlattices
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.46.1909/fulltext
Reference17 articles.
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3. High-detectivity (>1*10/sup 10/ cm square root Hz/W), InAsSb strained-layer superlattice, photovoltaic infrared detector
4. Long‐wavelength photoluminescence of InAs1−xSbx(0
5. Electrical properties of InAsxSb1−x alloys
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